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SB320 - Schottky Diodes

Key Features

  • s.
  • Metal-Semiconductor junction with guard ring.
  • Epitaxial construction.
  • Low forward voltage drop.
  • High current capability.
  • The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters).
  • Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS Voltage Maximum DC Blocking Voltage.

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Other Datasheets by Kexin Semiconductor

Part Number Description
SB3200 Schottky Diodes
SB3100 Schottky Diodes
SB3150 Schottky Diodes
SB330 Schottky Diodes
SB340 Schottky Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIP Type Schottky Diodes SB320 ~ SB3200 Diodes ■ Features ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage RMS Voltage Maximum DC Blocking Voltage Forward Voltage @ 3A Averaged Forward Current Peak Forward Surge Current @ 8.3ms Maximum DC Reverse Current Ta=25℃ Ta=100℃ Typical Junction Capacitance Thermal Resistance.Junction- to-Ambient Thermal Resistance.