FEATURES
For surface mounted applications. Low profile package. Built-in strain relief. Metal silicon junction, majority carrier conduction. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. 1.524 0.762 1.575 1.397 2 4.597 3.988 1 2.896 2.489 1.67 1.47 5.283 4.775 2.38 2.18 5.49 5.29 Recommended Land Pattern 2.438 1.981 0.203 0.051 0.305 0.152 ABSOLUTE MAXIMUM RATINGS
and ELECTRICAL CHARACTERISTICS
at 25 Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A * 1 Maximum DC reverse current * 1 TA=25 at rated DC blocking voltage TA=100 Typical thermal resistance Operating junction temperature range Storage temperature range * 1. Pulse test: 300ms pulse width, 1% duty cycle. Symbol VRRM VRMS VDC I(AV) IFSM VF...