FEATURES
Low turn-on voltage Fast switching Microminiature plastic package There devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge. ldeal for protection of MOS devices, steering, blasing,and couplong diodes for fast switching and low logic level applocations. SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.050.3 -0.05 +0.11.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.050.1 -0.02 ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Symbol Continuous Reverse Voltage VR Forward Current IF Forward Surge Current, tp = 10 ms IFSM Power Dissipation Tc = 25 Ptot Thermal Resistance Junction to Ambient Air R JA Junction Temperature TJ Storage Temperature Range TS Note: 1. Valid provided that electrodes are kept at ambient temperature Value 30 100 0.75 250(Note 1) 500 150 -65 to +150 Unit Volts mA A mW /W ELECTRICAL CHARACTERISTICS
Ta = 25 C h a ra c te ris tic Reverse Breakdown Voltage at IR = 100 A Leakage Current at VR = 25 V at IF = 2.1 m A Forw...