Kexin Electronics SI1903DL
Dual P-Channel MOSFET
| Part No. | SI1903DL |
|---|---|
| Datasheet | SI1903DL Download |
| Manufacturer | Kexin Electronics |
| Description | Dual P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-20V● ID =-4.1 A (VGS =-10V)
● RDS(ON) ＜ 0.995Ω (VGS =-4.5V)
● RDS(ON) ＜ 1.19Ω (VGS =-3.6V)
● RDS(ON) ＜ 1.8Ω (VGS =-2.5V) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 MOSFET 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta = 25℃ Ta = 75℃ Power Dissipation Ta = 25℃ Ta = 75℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg 5 Secs Steady State -20 ±12 - 0.44 - 0.41 - 0.31 - 0.3 -1 0.3 0.27 0.16 0.14 415 460 - 350 150 -55 to 150 Unit V A W ℃/W ℃ 1 SMD Type MOSFET Dual P-Channel MOSFET SI1903DL (KI1903DL)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance On state drain current Forward Transconductance...
