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SI1903DL - Dual P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-4.1 A (VGS =-10V).
  • RDS(ON) ＜ 0.995Ω (VGS =-4.5V).
  • RDS(ON) ＜ 1.19Ω (VGS =-3.6V).
  • RDS(ON) ＜ 1.8Ω (VGS =-2.5V) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 MOSFET 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta = 25℃ Ta = 75℃ Power Dissipation Ta = 25℃ Ta = 75℃ Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Fo.

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SMD Type Dual P-Channel MOSFET SI1903DL (KI1903DL) ■ Features ● VDS (V) =-20V ● ID =-4.1 A (VGS =-10V) ● RDS(ON) ＜ 0.995Ω (VGS =-4.5V) ● RDS(ON) ＜ 1.19Ω (VGS =-3.6V) ● RDS(ON) ＜ 1.8Ω (VGS =-2.5V) S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 MOSFET 1 S1 4 S2 2 G1 5 G2 3 D2 6 D1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Ta = 25℃ Ta = 75℃ Power Dissipation Ta = 25℃ Ta = 75℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg 5 Secs Steady State -20 ±12 - 0.44 - 0.41 - 0.31 - 0.3 -1 0.3 0.27 0.16 0.14 415 460 - 350 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.