SI1903DL
SI1903DL is Dual P-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) =-20V
- ID =-4.1 A (VGS =-10V)
- RDS(ON) ＜ 0.995Ω (VGS =-4.5V)
- RDS(ON) ＜ 1.19Ω (VGS =-3.6V)
- RDS(ON) ＜ 1.8Ω (VGS =-2.5V)
S1 1 G1 2 D2 3
6 D1 5 G2 4 S2
MOSFET
1 S1 4 S2 2 G1 5 G2 3 D2 6 D1
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current
Ta = 25℃ Ta = 75℃
Power Dissipation
Ta = 25℃ Ta = 75℃
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Junction Storage Temperature Range
Symbol VDS VGS
Rth JA Rth JF
TJ Tstg
5 Secs
Steady State
-20
±12
- 0.44
- 0.41
- 0.31
-...
