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SI2337DS - P-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =-80V.
  • ID =-2.2A (VGS =-10V).
  • RDS(ON) ＜ 270mΩ (VGS =-10V) S.
  • RDS(ON) ＜ 303mΩ (VGS =-6V) G1 S2 G 3D D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Si.

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SMD Type P-Channel Enhancement MOSFET SI2337DS (KI2337DS) MOSFET ■ Features ● VDS (V) =-80V ● ID =-2.2A (VGS =-10V) ● RDS(ON) ＜ 270mΩ (VGS =-10V) S ● RDS(ON) ＜ 303mΩ (VGS =-6V) G1 S2 G 3D D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range Soldering Recommendations (Peak Temperature) Ta = 25℃ Ta = 70℃ L=0.