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SI4463BDY - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-13.7 A (VGS =-10V).
  • RDS(ON) ＜ 11mΩ (VGS =-10V).
  • RDS(ON) ＜ 14mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 20mΩ (VGS =-2.5V) S +0.04 0.21 -0.02 SOP-8 G MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance. Junctio.

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SMD Type P-Channel MOSFET SI4463BDY (KI4463BDY) ■ Features ● VDS (V) =-20V ● ID =-13.7 A (VGS =-10V) ● RDS(ON) ＜ 11mΩ (VGS =-10V) ● RDS(ON) ＜ 14mΩ (VGS =-4.5V) ● RDS(ON) ＜ 20mΩ (VGS =-2.5V) S +0.04 0.21 -0.02 SOP-8 G MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg 10 Secs Steady State -20 ±12 -13.7 -9.8 -11.1 -7.9 -50 3 1.5 1.9 0.