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SI4490DY - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 200V.
  • ID = 4A (VGS = 10V).
  • RDS(ON) ＜ 80mΩ (VGS = 10V).
  • RDS(ON) ＜ 90mΩ (VGS = 6V) D G SOP-8 +0.04 0.21 -0.02 S MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃).
  • 1 Pulsed Drain Current Avalanch Current Power Dissipation.
  • 1 Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junc.

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SMD Type N-Channel MOSFET SI4490DY (KI4490DY) ■ Features ● VDS (V) = 200V ● ID = 4A (VGS = 10V) ● RDS(ON) ＜ 80mΩ (VGS = 10V) ● RDS(ON) ＜ 90mΩ (VGS = 6V) D G SOP-8 +0.04 0.21 -0.02 S MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) *1 Pulsed Drain Current Avalanch Current Power Dissipation *1 Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.1mH TA=25℃ TA=70℃ *1 *1: Surface Mounted on 1" x 1" FR4 board. Symbol VDS VGS ID IDM IAS PD RthJA RthJF TJ Tstg 10S Steady State 200 ±20 4 2.85 3.2 2.3 40 15 3.1 1.