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SI4946DY - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 6.5 A (VGS = 10V).
  • RDS(ON) ＜ 41mΩ (VGS = 10V).
  • RDS(ON) ＜ 52mΩ (VGS = 4.5V).
  • 175 °C Maximum Junction Temperature +0.04 0.21 -0.02 D1 D2 MOSFET 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain2 6 Drain2 7 Drain1 8 Drain1 G1 G2 S1 S2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation.

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SMD Type Dual N-Channel MOSFET SI4946DY (KI4946DY) SOP-8 ■ Features ● VDS (V) = 60V ● ID = 6.5 A (VGS = 10V) ● RDS(ON) ＜ 41mΩ (VGS = 10V) ● RDS(ON) ＜ 52mΩ (VGS = 4.5V) ● 175 °C Maximum Junction Temperature +0.04 0.21 -0.02 D1 D2 MOSFET 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain2 6 Drain2 7 Drain1 8 Drain1 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Tc=25℃ Tc=70℃ Ta=25℃ Ta=70℃ L = 0.