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SI7119DN - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-200V.
  • ID =-3.8 A (VGS =-10V).
  • RDS(ON) ＜ 1.05Ω (VGS =-10V).
  • RDS(ON) ＜ 1.1Ω (VGS =-6V) S G PowerPAK 1212-8 (QFN5X6) D.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction Temperature Junction Storage Temperature Range TC = 25 °C.

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SMD Type P-Channel MOSFET SI7119DN (KI7119DN) MOSFET ■ Features ● VDS (V) =-200V ● ID =-3.8 A (VGS =-10V) ● RDS(ON) ＜ 1.05Ω (VGS =-10V) ● RDS(ON) ＜ 1.1Ω (VGS =-6V) S G PowerPAK 1212-8 (QFN5X6) D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range TC = 25 °C TC = 70 °C Ta = 25 °C Ta = 70 °C L = 0.1 mH TC = 25 °C TC = 70 °C Ta = 25 °C Ta = 70 °C t ≤ 10 s Steady State Symbol VDS VGS ID IDM IAS EAS PD RthJA RthJC TJ Tstg 3.30 mm D 8 D 7 D 6 D 5 S 1 S 3.