SI7119DN
SI7119DN is P-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) =-200V
- ID =-3.8 A (VGS =-10V)
- RDS(ON) ＜ 1.05Ω (VGS =-10V)
- RDS(ON) ＜ 1.1Ω (VGS =-6V)
Power PAK 1212-8 (QFN5X6)
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy
Power Dissipation
Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range
TC = 25 °C TC = 70 °C Ta = 25 °C Ta = 70 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C Ta = 25 °C Ta = 70 °C t ≤ 10 s Steady State
Symbol VDS VGS
IDM IAS EAS
Rth JA Rth JC
TJ Tstg
3.30 mm
7 D
6 D
3.30 mm
2 S
3 G
Bottom View
Rating -200 ±20 -3.8
-3 -1.2 -0.95 -5
5 1.25 52 33 3.7 2.4 35 3.8 150 -55 to 150
Unit V
A m J W ℃/W ℃
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