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ZXMN10A08G - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 2.9 A (VGS = 10V).
  • RDS(ON) ＜ 250mΩ (VGS = 10V) D.
  • RDS(ON) ＜ 300mΩ (VGS = 6V) G S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ VGS= 10V Pulsed Drain Current Power Dissipation Linear derating fa.

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SMD Type N-Channel MOSFET ZXMN10A08G (KXMN10A08G) MOSFET ■ Features ● VDS (V) = 100V ● ID = 2.9 A (VGS = 10V) ● RDS(ON) ＜ 250mΩ (VGS = 10V) D ● RDS(ON) ＜ 300mΩ (VGS = 6V) G S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ VGS= 10V Pulsed Drain Current Power Dissipation Linear derating factor Linear derating factor Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range TA=25℃ (Note.1) TA=70℃ (Note.1) TA=25℃ (Note.2) TA=25℃ (Note.2) TA=25℃ (Note.1) (Note.2) (Note.