Kexin Electronics ZXTP2013Z
PNP Transistor
FEATURES
● 3.5 amps continuous current● Up to 10 amps peak current
● Very low saturation voltages PNP Transistor ZXTP2013Z Transistors 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter
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ABSOLUTE MAXIMUM RATINGS
TA = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -7 Continuous Collector Current Peak Pulse Current IC -3.5 A ICM -10 Power Dissipation at TA = 25℃ (a) Power Dissipation at TA = 25℃ (b) 1.5 Pd W 2.1 Thermal Resistance Junction to Ambient (a) Thermal Resistance Junction to Ambient (b) 83 RθJA ℃/W 60 Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Notes: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 1 SMD Type Transistors PNP Transistor...