HSCH-9162 Overview
The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process. Ratings Symbol Top Tstg PB Parameters/conditions Operating temperature range Storage temperature range Burnout power Typ. Units 65 150 °C 65 200 °C 20 dBm DC Specifications/Physical Properties (TA = 25 °C) Part number HSCH-9161 HSCH-9162 200 Junction capacitance (pF) Typ.
HSCH-9162 Key Features
- Low junction capacitance
- fc > 200 GHz
- Lower temperature coefficient than silicon
- Durable construction Typical 6 gram beam lead strength High power handling capability
- Data Sheet
