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AP2012SF4C-P22 - Infrared Emitting Diode

General Description

z SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes.

Key Features

  • z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness z Mechanically and spectrally matched to the phototransistor z Package : 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant.

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Datasheet Details

Part number AP2012SF4C-P22
Manufacturer Kingbright
File Size 518.81 KB
Description Infrared Emitting Diode
Datasheet download datasheet AP2012SF4C-P22 Datasheet

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AP2012SF4C-P22 2.0 x 1.25 mm Infrared Emitting Diode DESCRIPTION z SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. FEATURES z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness z Mechanically and spectrally matched to the phototransistor z Package : 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared Illumination for cameras z Machine vision systems z Surveillance systems z Industrial electronics z IR data transmission z Remote control PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Confidential Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3.