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APA3010P3BT-GX - PHOTOTRANSISTOR

General Description

z Made with NPN silicon phototransistor chips

Key Features

  • z 3.0 x 2.0 x 1.0 mm right angle SMD LED, 1.0 mm thickness z Mechanically and spectrally matched to the infrared emitting LED lamp z Blue transparent lens z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z Tinned pads for improved solderability z RoHS compliant.

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Datasheet Details

Part number APA3010P3BT-GX
Manufacturer Kingbright
File Size 222.97 KB
Description PHOTOTRANSISTOR
Datasheet download datasheet APA3010P3BT-GX Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APA3010P3BT-GX 3.0 mm x 1.0 mm Right Angle Phototransistor DESCRIPTION z Made with NPN silicon phototransistor chips FEATURES z 3.0 x 2.0 x 1.0 mm right angle SMD LED, 1.0 mm thickness z Mechanically and spectrally matched to the infrared emitting LED lamp z Blue transparent lens z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z Tinned pads for improved solderability z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) ABSOLUTE MAXIMUM RATINGS at TA=25°C Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.15(0.006") unless otherwise noted. 3.