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APT2012F3C - Infrared Emitting Diode

General Description

F3 Made with Gallium Arsenide Infrared Emitting diodes

Key Features

  • 2.0 mm x 1.25 mm SMD LED, 0.75mm thickness Mechanically and spectrally matched to the phototransistor Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant.

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Datasheet Details

Part number APT2012F3C
Manufacturer Kingbright
File Size 286.89 KB
Description Infrared Emitting Diode
Datasheet download datasheet APT2012F3C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APT2012F3C 2.0x1.25mm Infrared Emitting Diode DESCRIPTIONS F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES 2.0 mm x 1.25 mm SMD LED, 0.75mm thickness Mechanically and spectrally matched to the phototransistor Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS Backlight Status indicator Home and smart appliances Wearable and portable devices Healthcare applications PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface.