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APTD3216P3C-P22 - Phototransistor

Datasheet Summary

Description

z Made with NPN silicon phototransistor chips

Features

  • z 3.2 mm X 1.6mm SMD LED, 1.8 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant.

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Datasheet preview – APTD3216P3C-P22

Datasheet Details

Part number APTD3216P3C-P22
Manufacturer Kingbright
File Size 446.76 KB
Description Phototransistor
Datasheet download datasheet APTD3216P3C-P22 Datasheet
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Full PDF Text Transcription

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APTD3216P3C-P22 3.2 x 1.6 mm Phototransistor DESCRIPTION z Made with NPN silicon phototransistor chips FEATURES z 3.2 mm X 1.6mm SMD LED, 1.8 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Confidential ABSOLUTE MAXIMUM RATINGS at TA=25°C Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4.
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