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KHX1333C9D3B1-4G Datasheet 4gb 512m X 64-bit Ddr3-1333 Cl9 240-pin Dimm

Manufacturer: Kingston

Overview: KHX1333C9D3B1/4G 4GB 512M x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh mand Time (tRFCmin) Row Active Time (tRASmin) Maximum Operating Power UL Rating Operating Temperature Storage Temperature 9 cycles 49.5ns (min.) 260ns (min.) 36ns (min.) 2.100 W* 94 V - 0 0o C to 85o C -55o C to +100o C *Power will vary depending on the SDRAM used.

Datasheet Details

Part number KHX1333C9D3B1-4G
Manufacturer Kingston
File Size 138.83 KB
Description 4GB 512M x 64-Bit DDR3-1333 CL9 240-Pin DIMM
Datasheet KHX1333C9D3B1-4G-Kingston.pdf

General Description

HyperX KHX1333C9D3B1/4G is a 512M x 64-bit (4GB) DDR31333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory module, based on eight 512M x 8-bit FBGA ponents.

The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9.

This 240-pin DIMM uses gold contact fingers.

Key Features

  • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4.

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