MMBT3904
MMBT3904 is NPN Silicon General Purpose Transistors manufactured by Kingtronics.
For switching and amplifier applications
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25℃
PARAMETER DC Current Gain at VCE = 1 V, IC = 0.1 m A at VCE = 1 V, IC = 1 m A at VCE = 1 V, IC = 10 m A at VCE = 1 V, IC = 50 m A at VCE = 1 V, IC = 100 m A Collector Base Cutoff Current at VCB = 30 V Base Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 m A Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 m A, IB = 1 m A at IC = 50 m A, IB = 5 m A Base Emitter Saturation Voltage at IC = 10 m A, IB = 1 m A at IC = 50 m A, IB = 5 m A Current Gain Bandwidth Product at VCE = 20 V, IC = 10 m A, f = 100 MHz Collector Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz Delay Time at VCC = 3 V, VBE = 0.5 V, IC = 10 m A, IB1 = 1 m A Rise Time at VCC = 3 V, VBE = 0.5 V, IC = 10 m A, IB1 = 1 m A Storage Time at VCC = 3 V, IC = 10 m A, IB1 =
- IB2 = 1 m A Fall Time at VCC = 3 V, IC = 10 m A, IB1 =
- IB2 = 1 m A
.kingtronics.
NPN Silicon General Purpose Transistors
SYMBOL VCBO VCEO VEBO IC Ptot TJ Tstg
1.Base 2.Emitter 3.Collector SOT-23 Plastic Package
VALUE 60 40 6 200 350 150
- 55 to + 150
UNIT V V V m A m W ℃ ℃
SYMBOL h FE
ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat)
VBE(sat) f T Cob td tr ts tf
MIN.
40 70 100 60 30
- -
- 0.65
- 300
- -
- -
- MAX.
300 50
- -
- 0.2 0.3
0.85 0.95
- 4
UNIT
- n A n A V V V...
