MMBTA93 Datasheet | Kingtronics

FEATURES For high voltage switching and amplifier applications MMBTA92 THRU MMBTA93 PNP Silicon High Voltage Transistors Absolute Maximum Ratings (Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (Ta = 25℃) MMBTA92 MMBTA93 MMBTA92 MMBTA93 SYMBOL -VCBO -VCEO -VEBO -IC Ptot Tj Tstg VALUE 300 200 300 200 350 150 - 55 to + 150 UNIT V V m A m W OC OC PARAMETER DC Current Gain Collector Base Cutoff Current at -VCE = 10 V, -IC = 1 m A at -VCE = 10 V, -IC = 10 m A at -VCE = 10 V, -IC = 30 m A at -VCB = 200 V MMBTA92 at -VCB = 160 V Emitter Base Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 m A MMBTA92 MMBTA93 MMBTA92 MMBTA93 Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 20 m A, -IB = 2 m A Base Emitter Saturation Voltage at -IC = 20 m A, -IB = 2 m A Current Gain Bandwidth Product at -VCE = 20 V, -IC = 10 m A, f = 100 MHz Collector Base Capacitance at -VCB = 20 V, f = 1 MHz MMBTA92 MMBTA93 SYMBOL h FE h FE h FE -ICBO -ICBO -IEBO -V(BR)CBO -V(BR)CBO -V(BR)CEO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) f T Ccb Min. 25 80 25 - 300 200 300 200 -...