• Part: SMV1412
  • Description: SILICON HYPERABRUPT TUNING DIODES
  • Category: Diode
  • Manufacturer: Knox Semiconductor Inc
  • Size: 37.23 KB
Download SMV1412 Datasheet PDF
Knox Semiconductor Inc
SMV1412
SMV1412 is SILICON HYPERABRUPT TUNING DIODES manufactured by Knox Semiconductor Inc.
SILICON HYPERABRUPT TUNING DIODES - High capacitance ratios - Linear tuning between 2 and 8 volts - Available over a broad range junction capacitances - Satisfies a large number of broadband applications thru the VHF frequency band SMV1401 - SMV1412 DIODE CAPACITANCE TUNING RATIO (TR) PART (CT) C- 1V / C- 10V C- 2V / C- 10V NUMBER p F @ 1V- 1MHz p F @ 2V- 1 MHz @ 1 MHz @ 1 MHz - - - MIN MAX MIN MAX MIN MIN SMV1401 440 660 14:1 SMV1402 45 69 10:1 SMV1403 140 210 10:1 SMV1404 96 144 10:1 SMV1405 200 300 10:1 SMV1406 80 120 10:1 SMV1407 54 82 10:1 SMV1408 37 57 10:1 SMV1409 26 40 10:1 SMV1410 17 27 9.5:1 SMV1411 12 18 8.5:1 SMV1412 8 12 7.5:1 QUALITY FACTOR AVAILABLE Q IN THE FOLLOWING @ 2V - 1 MHz PACKAGES MIN 200 -01, -14, -15 200 -01, -08, -09, -15 200 -01, -09, -15 200 -01, -08, -09, -15 200 -01, -09, -15 200 -01, -08, -09, -15 200 -01, -08, -09, -15 200 -01, -06, -08, -09, -10, -15 200 -01, -08, -06 200 -01, -06, -07, -08, -09, -10, -15 200 -01, -06, -07, -08, -09, -10, -15 200 -01, -06, -07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance - - - 250 m W 125°C 12 Vdc Min 0.1 µAdc -55° to + 125°C -65° to + 150°C Standard Device ± 20% Package Styles Requires adding a dash suffix number to the part number SOT23 SINGLE SOT23 mon Anode SOT23 mon Cathode SOT223 SOD323 SOD523 (SC79, SC90) TO92 2 Terminal (TMV) CHIPS -08 -09 -10 -14 -06 -07 -15 -01 P.O. BOX 609 - ROCKPORT, MAINE 04856 - 207-236-6076 - FAX...