3DD3853 - NPN Transistor

Features

z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃).

Koo Chin

Datasheet Details

Part number	3DD3853
Manufacturer	Koo Chin
File Size	291.32 KB
Description	NPN Transistor
Datasheet	3DD3853 Datasheet
Additional preview pages of the 3DD3853 datasheet.

📁 Similar Datasheet

3DD3852 - NPN Transistor (YUEJING HIGH TECHNOLOGY)
3DD3010A1 - Silicon NPN Transistor (Huajing Microelectronics)
3DD3015A1 - Silicon NPN Transistor (Huajing Microelectronics)
3DD3015A1-H - Silicon NPN bipolar transistor (Huajing Microelectronics)
3DD3015A3 - Silicon NPN Transistor (Huajing Microelectronics)
3DD301B - Silicon Power Transistor (Inchange)
3DD301C - Silicon Power Transistor (Inchange)
3DD301D - Silicon Power Transistor (Inchange)
3DD3020A3 - Silicon NPN Transistor (Huajing Microelectronics)
3DD3020A3-H - Silicon NPN bipolar transistor (Huajing Microelectronics)

Other Datasheets by Koo Chin

3DD3852 - NPN Transistor

Full PDF Text Transcription

Click to expand full text

3DD3853 TRANSISTOR (NPN) TO-220F FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature Value 60 60 7 3 150 -55-150 Units V V V A ℃ ℃ 1. BASE 2. COLLECTOR 3. EMITTE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency *Pulse test: tp≤300µS, δ≤0.02.

Published: May 21, 2014 |