3DD3853
FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature Value 60 60 7 3 150 -55-150 Units V V V A ℃ ℃
1. BASE 2. COLLECTOR 3. EMITTE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency
- Pulse test: tp≤300µS, δ≤0.02. CLASSIFICATION OF Rank Range h FE O 60-120 Y 100-200 GR 150-300 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE
- VCE(sat)
- f T Test conditions MIN 60 60 7 100 100 60 300 1.0 5 V MHz TYP MAX UNIT V V V µA µA
IC=1m A, IE=0 IC=10m A, IB=0 IE=100µA,...
