C4368
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: VCEO= 150V(Min)
- plement to Type 2SA1657
APPLICATIONS
- Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
1.5 A
IB Base Current-Continuous
Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃
TJ Junction Temperature
Tstg Storage Temperature
0.5 A
20 W
150 ℃
-55~150 ℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SC4368
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10m A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500m A; IB= 50m...
