KRC110S
FEATURES
ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT C
R1 B
KRC110S~KRC114S
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
23 1
M 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00
- 0.10 0.55 0.20 MIN
1.00+0.20/-0.10 7
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VCBO VCEO VEBO
Collector Current
RATING UNIT 50 V 50 V 5V 100 m A
CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range
SOT-23
SYMBOL PC Tj Tstg
RATING 200 150
-55ᴕ150
UNIT m W ᴱ ᴱ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST...
