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KRC281M - (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

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Korea Electronics

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KRC281M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR by Korea Electronics - Datasheet Preview — Datasheet preview – KRC281M

Datasheet Details

Part number	KRC281M
Manufacturer	Korea Electronics
File Size	380.84 KB
Description	(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	KRC281M Datasheet
Additional preview pages of the KRC281M datasheet.

Product details

Features

High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M.

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Published: Oct 28, 2005 |