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KRC281M - (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M.

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Datasheet Details

Part number KRC281M
Manufacturer Korea Electronics
File Size 380.84 KB
Description (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KRC281M Datasheet

Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANSISTOR B A O M EQUIVALENT CIRCUIT J E E C B R1 1 L 2 3 N DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ 0.15 D 2.40 + E 1.27 F 2.30 _ 0.50 G 14.00 + H 0.60 MAX J 1.05 K 1.45 L 25 0.80 M N 0.55 MAX O 0.75 F 1. EMITTER 2. COLLECTOR 3.
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