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KRC281S - EPITAXIAL PLANAR NPN TRANSISTOR

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Korea Electronics

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KRC281S EPITAXIAL PLANAR NPN TRANSISTOR by Korea Electronics - Datasheet Preview — Datasheet preview – KRC281S

Datasheet Details

Part number	KRC281S
Manufacturer	Korea Electronics
File Size	343.90 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	KRC281S Datasheet
Additional preview pages of the KRC281S datasheet.

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Features

High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

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Published: Oct 28, 2005 |