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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
C H
KRC281M~KRC286M
EPITAXIAL PLANAR NPN TRANSISTOR
B
A
O
M
EQUIVALENT CIRCUIT
J
E
E
C B R1
1 L
2
3
N
DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ 0.15 D 2.40 + E 1.27 F 2.30 _ 0.50 G 14.00 + H 0.60 MAX J 1.05 K 1.45 L 25 0.80 M N 0.55 MAX O 0.75
F
1. EMITTER 2. COLLECTOR 3.
KRC283M Datasheet
