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KRC686T - (KRC681T - KRC686T) EPITAXIAL PLANAR NPN TRANSISTOR

Download the KRC686T datasheet PDF. This datasheet also covers the KRC681T variant, as both devices belong to the same (krc681t - krc686t) epitaxial planar npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F KRC681T~KRC686T.

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Note: The manufacturer provides a single datasheet file (KRC681T_KoreaElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KRC686T
Manufacturer Korea Electronics
File Size 387.10 KB
Description (KRC681T - KRC686T) EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KRC686T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F KRC681T~KRC686T EPITAXIAL PLANAR NPN TRANSISTOR E B 1 5 DIM MILLIMETERS _ 0.2 A 2.9 + B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 G 2 3 4 G J C R1 5 4 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5.