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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION.
KRC881T~KRC886T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
C A F G
K 1
B
K 6
Low on resistance : Ron=1 (Typ.) (IB=5mA)
2
5 4
DIM A B C D E
D
F G H I J K L
3
MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 +
0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
J
C R1
6
5
4
B
Q1
Q2
1. 2. 3. 4. 5. 6.
KRC881T Datasheet
