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KRC881T - (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR

Product Overview

Korea Electronics

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KRC881T (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR by Korea Electronics - Datasheet Preview — Datasheet preview – KRC881T

Datasheet Details

Part number	KRC881T
Manufacturer	Korea Electronics
File Size	386.55 KB
Description	(KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	KRC881T Datasheet
Additional preview pages of the KRC881T datasheet.

Product details

Features

High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F G K 1 B K 6 Low on resistance : Ron=1 (Typ. ) (IB=5mA) 2 5 4 DIM A B C D E D F G H I J K L 3.

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Published: Oct 28, 2005 |