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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
Complementary to MPS8050S.
L
MPS8550S
EPITAXIAL PLANAR PNP TRANSISTOR
E B
L
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING -40 -25 -6 -1.5 350 150 -55 150 0.6 ) UNIT V
1
P
P
N
C
V V A mW
DIM A B C D E G H J K L M N P
MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
A
G
H
M
1. EMITTER 2. BASE 3. COLLECTOR
* PC : Package Mounted On 99.5% Alumina (10 8
K
SOT-23
Marking
h FE Rank Lot No.
MPS8550S Datasheet
