Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION.
KRC881T~KRC886T
EPITAXIAL PLANAR NPN TRANSISTOR
Features
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
K 1
K 6
Low on resistance : Ron=1 (Typ.) (IB=5mA)
5 4
DIM A B C D E
F G H I J K L
MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 +
0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
C R1
Q1
Q2
1. 2. 3. 4. 5. 6.
Q1 Q1 Q2 Q2 Q2 Q1
EMITTER BASE COLLECTOR...