VT3664164T Datasheet | Kreton

DESCRIPTION The VT3664164T is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Using pipelined architecture technology. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed .. at a burst length of 1,2,4,8 or full page when a bank and row is selected by an ACTIVE mand. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. FEATURES - 3.3V ± 0.3V power supply - 1,048,576 words x 4 banks x 16 bits organization - Four banks operation - Power-down Mode - Sequential and interleave burst - Burst Length: 1,2,4,8 and full page - CAS latency: 2 and 3 - 4K refresh cycles/64 ms - Auto & self refresh - DQM for masking - Burst read single-bit write operation - LVTTL patible with multiplexed address - All inputs are sample at the positive going edge of the system clock - Reflow temperature condition: Max 245℃~250℃ - The environmental testing temperature： All type of VT SDRAM testing temperature at 75℃(Max). KRETON CORP. Page 1 Ver.9 1M x 4 BANKS x 16 BITS SDRAM PIN CONFIGURATION (Top view) May., 2003 .. AVAILABLE PART NUMBER PART NUMBER VT3664164T-7 VT3664164T-7H VT3664164T-6L VT3664164T-6 VT3664164T-5L VT3664164T-5 SPEED 125MHz 133MHz 143MHz 166MHz 183MHz 200MHz Note：The second row (xx xxxx) part number is kreton’s product serial number and data code. KRETON CORP. Page 2 Ver.9 1M x 4 BANKS x 16 BITS SDRAM PIN DESCRIPTION PIN NAME FUNCTION DESCRIPTION May., 2003 A0 - A11 BA0 - BA1 DQ0 - DQ15 /CS .. /RAS /CAS /WE DQM CLK CKE VDD VSS VDDQ VSSQ NC Address Bank Select Data Input / Output Chip Select Row Address Strobe Column Address Strobe Write Enable Input/output mask Clock Inputs Clock Enable Power (+3.3V) Ground Power (+3.3V) for I/O buffer Ground for I/O buffer No Connection Multiplexed pins for row and column address. Row address:A0-A11. Column address: A0-A7. Select...