KX1N65R150PD3
Description
The KX1N65R150PD3, 650V, 133mΩ Gallium Nitride (Ga N) FETs are hybrid normally-off Gallium Nitride (Ga N) field effect transistors with the strongest gate and the lowest reverse voltage drop of all wide-band-gap devices in the market. They allow simple gate drive, offer best-in-class performance and outstanding reliability.
Features
- Strong gate with a high threshold, no need for negative gate drive, and a high repetitive input voltage tolerance of ±20V.
- Fast turn-on/off speed for reduced cross-over losses.
- Low QG and simple gate drive for lowest driver consumption at high frequencies.
- Lowest VF in off-state reverse conduction among all Ga N FETs for low loss during dead-times.
- Low QRR for outstanding hard-switched bridge applications.
- High spike tolerance of 800V for enhanced reliability.
Benefits
- Enable very high conversion efficiencies.
- Enable higher frequency for pact power supplies.
- End-product cost & size savings due to reduced cooling requirements
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