KX2N65R150PD Description
The KX2N65R150PD, 650V, 3V Vth,133mΩ Gallium Nitride (GaN) FETs are hybrid normally-off Gallium Nitride (GaN) field effect transistors with the strongest gate and the lowest reverse voltage drop of all wide-band-gap devices in the market. They allow simple gate drive, offer best-in-class performance and outstanding reliability.
KX2N65R150PD Key Features
- Strong gate with a high threshold, no need for negative gate drive, and a high repetitive input voltage tolerance of ±20
- Fast turn-on/off speed for reduced cross-over losses
- Low QG and simple gate drive for lowest driver consumption at high frequencies
- Lowest VF in off-state reverse conduction among all GaN FETs for low loss during dead-times
- Low QRR for outstanding hard-switched bridge
KX2N65R150PD Applications
- High spike tolerance of 800V for enhanced reliability