Datasheet Details
| Part number | KS32026DAT |
|---|---|
| Manufacturer | Kwansemi |
| File Size | 1.07 MB |
| Description | Single N-Channel Advanced Power MOSFET |
| Datasheet | KS32026DAT-Kwansemi.pdf |
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Overview: KS32026DAT Single N-Channel Advanced Power MOSFET.
| Part number | KS32026DAT |
|---|---|
| Manufacturer | Kwansemi |
| File Size | 1.07 MB |
| Description | Single N-Channel Advanced Power MOSFET |
| Datasheet | KS32026DAT-Kwansemi.pdf |
|
|
|
D G S TO-252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RqJC ③ RqJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed S Single N-Channel MOSFET Rating Unit TC=25°C 30 V ±20 175 °C -55 to 175 °C 220 A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 880 A 220 A 156 156 W 78 0.96 °C/W 100 °C/W 441 mJ Kwansemi Semiconductor Co., Ltd Rev.
A– SEP., 2022 1 www.kwansemi.com KS32026DAT Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition KS32026DAT Min.
Typ.
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