Datasheet Details
| Part number | KS4630HA |
|---|---|
| Manufacturer | Kwansemi |
| File Size | 1.48 MB |
| Description | Complementary Advanced Power MOSFET |
| Datasheet | KS4630HA-Kwansemi.pdf |
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| Part number | KS4630HA |
|---|---|
| Manufacturer | Kwansemi |
| File Size | 1.48 MB |
| Description | Complementary Advanced Power MOSFET |
| Datasheet | KS4630HA-Kwansemi.pdf |
|
|
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D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation RqJL ③ RqJA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Kwansemi Semiconductor Co., Ltd Rev.
A– JUN., 2022 1 S1 S2 Complementary MOSFET N-Channel P-Channel Unit 40 -40 V ±20 ±20 150 150 °C -55 to 150 -55 to 150 °C TA=25°C 1.6 -1.6 A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 28 7 5.6 2 1.3 40 62.5 -20 A -5 A -4 2 W 1.3 40 °C/W 62.5 °C/W 12 16 mJ www.kwansemi.com KS4630HA Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition KS4630HA Min.
Typ.
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