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MD56V62160M-75TA - SYNCHRONOUS DYNAMIC RAM

Download the MD56V62160M-75TA datasheet PDF. This datasheet also covers the MD56V62160M-7TA variant, as both devices belong to the same synchronous dynamic ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The MD56V62160M-xxTA is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology.

The device operates at 3.3V.

The inputs and outputs are LVTTL compatible.

Key Features

  • Product Name Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O) Interface Operating Frequency Operating Temperature Functions /CAS Latency Burst Length Burst Type Write Mode Refresh Package MD56V62160M-xxTA xx indicates speed rank. 4Bank x 1,048,576Word x 16Bit 4,096Row x 256Column 3.3V0.3V 3.3V0.3V LVTTL compatible Max. 143MHz (Speed Rank 7) 0 to 70°C General-purpose SDRAM command interface Mode register CL setting: 2, 3 Mode register BL setting:1, 2, 4, 8, Full page M.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MD56V62160M-7TA-LAPIS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MD56V62160M-75TA
Manufacturer LAPIS
File Size 452.56 KB
Description SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet MD56V62160M-75TA Datasheet

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Other Datasheets by LAPIS

Part Number Description
MD56V62160M-7TA SYNCHRONOUS DYNAMIC RAM
MD56V62160M-10TA SYNCHRONOUS DYNAMIC RAM
MD56V62160E SYNCHRONOUS DYNAMIC RAM
MD56V72161C-10TA SYNCHRONOUS DYNAMIC RAM
MD56V72161C-10TAP SYNCHRONOUS DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MD56V62160M-xxTA 4-Bank×1,048,576-Word×16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160MTA-06 Issue Date : Feb. 12, 2014 DESCRIPTION The MD56V62160M-xxTA is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES Product Name Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O) Interface Operating Frequency Operating Temperature Functions /CAS Latency Burst Length Burst Type Write Mode Refresh Package MD56V62160M-xxTA xx indicates speed rank. 4Bank x 1,048,576Word x 16Bit 4,096Row x 256Column 3.3V0.3V 3.3V0.3V LVTTL compatible Max.