Datasheet Details
| Part number | MR45V200B |
|---|---|
| Manufacturer | LAPIS |
| File Size | 502.46 KB |
| Description | FeRAM |
| Datasheet | MR45V200B-LAPIS.pdf |
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Overview: MR45V200B FEDR45V200B-02 Issue Date: Oct. 2, 2018 2M(262,144-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI.
| Part number | MR45V200B |
|---|---|
| Manufacturer | LAPIS |
| File Size | 502.46 KB |
| Description | FeRAM |
| Datasheet | MR45V200B-LAPIS.pdf |
|
|
|
The MR45V200B is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology.
The MR45V200B is accessed using Serial Peripheral Interface.
Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data.
| Part Number | Description |
|---|---|
| MR45V200A | FeRAM |
| MR45V256A | 256k-Bit FeRAM |
| MR45V032A | 32k-Bit FeRAM |
| MR45V064B | 64k-Bit FeRAM |
| MR45V100A | 1M-Bit EdRAM |
| MR44V064A | FeRAM |
| MR44V064B | 64k-Bit FeRAM |
| MR44V100A | 1M-Bit FeRAM |
| MR48V256C | FeRAM |