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MR45V256A
FEDR45V256A-01
Issue Date: Nov. 12, 2013
256k(32,768-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI
GENERAL DESCRIPTION
The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.
MR45V256A Datasheet
