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MSM56V16161N - SYNCHRONOUS DYNAMIC RAM

General Description

The MSM56V16161N is a 2-Bank  524,288-word  16-bit Synchronous dynamic RAM.

The device operates at 3.3V.

The inputs and outputs are LVTTL compatible.

Key Features

  • Product Name Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O) Interface Operating Frequency Operating Temperature Function /CAS Latency Burst Length Burst Type Write Mode Refresh Package MSM56V16161N 2Bank x 524,288Word x 16Bit 2,048Row x 256Column 3.3V0.3V 3.3V0.3V LVTTL compatible Max. 166MHz (Speed Rank 6) 0 to 70°C Standard SDRAM command interface 2, 3 1, 2, 4, 8, Full page Sequential, Interleave Burst, Single Auto-Refresh, 4,096cycle/64ms (0°C  Ta  70°C), Self.

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Datasheet Details

Part number MSM56V16161N
Manufacturer LAPIS
File Size 1.67 MB
Description SYNCHRONOUS DYNAMIC RAM
Datasheet download datasheet MSM56V16161N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSM56V16161N 2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V16161N-01 Issue Date : April 27, 2016 DESCRIPTION The MSM56V16161N is a 2-Bank  524,288-word  16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES Product Name Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O) Interface Operating Frequency Operating Temperature Function /CAS Latency Burst Length Burst Type Write Mode Refresh Package MSM56V16161N 2Bank x 524,288Word x 16Bit 2,048Row x 256Column 3.3V0.3V 3.3V0.3V LVTTL compatible Max.