Datasheet Details
| Part number | APA6101010002 |
|---|---|
| Manufacturer | LASER ENTERPRISE |
| File Size | 140.24 KB |
| Description | 850nm Multi Mode High Power VCSEL |
| Datasheet | APA6101010002-LASERENTERPRISE.pdf |
|
|
Overview: 850nm Multi Mode High Power VCSEL Chip Specification.
| Part number | APA6101010002 |
|---|---|
| Manufacturer | LASER ENTERPRISE |
| File Size | 140.24 KB |
| Description | 850nm Multi Mode High Power VCSEL |
| Datasheet | APA6101010002-LASERENTERPRISE.pdf |
|
|
|
850nm MM High Power VCSEL Chip Electro-Optical Characteristics All parameters at 20°C, pulsed (0.3ms on, 2.2ms period), unless otherwise noted.
PARAMETERS Threshold Current SYMBOL CONDITIONS MIN TYP MAX UNIT Ith 120 mA Operating Current Iop 1000 1300 mA Operating Voltage Differential Efficiency1 Differential resistance1 Uop diff Rdiff 2.6 3.1 V 0.85 W/A 0.8 Ohm Optical Output Power 50°C Power Conversion Efficiency2 Center Wavelength P50C PCEop center 700 800 950 mW 30 35 % 840 850 865 nm Spectral Width Temperature Tuning Coefficient Beam Divergence3 -10dB d/dT FW1/e2 3 nm 0.06 nm/K 22 30 37 deg 1 Defined as slope around operating current 2 Evaluated from pulsed power measurement and cw voltage measurement 3 FW1/e2 = full width 1/e2
| Part Number | Description |
|---|