HAZ20000-SRU Datasheet | LEM

Features - Hall effect measuring principle - Galvanic isolation between primary ± 15 ± 30 30,000 > 1000 0-10 100 > 10 V m A A MΩ V DC Ω kΩ .. VC IC IOC RIS VOUT ROUT RL Supply voltage (± 5 %) Current consumption Overload capacity Isolation resistance @ 500 VDC Output voltage @ ± IPN, RL = 10 kΩ, TA = 25°C Output internal resistance approx. Load resistance - True-rms, 0-10V DC voltage output - Isolation voltage 12k V Rms/ 50 Hz - Low power consumption - Package in PBT meeting UL 94-V0 / 1 min and secondary circuit Advantages - Easy mounting - Small size and space savings - Only one design for wide current - High immunity against external interference ratings range Accuracy - Dynamic performance data ε VOE VOH VOT TCε G tr f Accuracy @ IPN, TA = 25°C (without offset) Linearity error 1) (0 .. ± IPN) Electrical offset voltage, TA = 25°C, @ IP = 0 Hysteresis offset voltage @ IP = 0; after an excursion of 1 x IPN Thermal drift of VOE Thermal drift of the gain (% of reading) Response time @ 90% of IPN Frequency range, ±3 d B, small signal 2) <±1 % < ± 0.5 % of IPN < ± 100 m V < ± 12.5 m V <±1 m V/K < ± 0.05 %/K < 400 ms DC and 15 to 3k Hz Applications - Battery supplied applications - Uninterruptible Power Supplies - Power supplies for welding and tele applications. (UPS) General data TA TS Ambient operating temperature Ambient storage temperature Housing PBT 30% glassfiber UL94 classification Mass Standards 3) - 25 .. + 85 - 30 .. + 90 °C °C m V0 approx. 6 kg EN 50178:1997 Application Domain - Industrial Notes : 1) 2) 3) Linearity data exclude the electrical offset. To avoid excessive core heating. Please consult characterisation report for more technical details and application advice....