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HTB200-P Datasheet PDF

LEM HTB200-P

Current Transducers HTB 50~400-P and HTB 50~100-TP

Part No. HTB200-P
Datasheet HTB200-P Download
Manufacturer
LEM
Description Current Transducers HTB 50~400-P and HTB 50~100-TP
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HTB200-P datasheet page 1 preview

FEATURES

● Hall effect measuring principle
● Galvanic isolation between primary
● Isolation voltage 2500V
● Low power consumption
● Wide power supply: ±12V to ±15V
● Primary bus bar option for 50A and 100A version for ease of connection and secondary circuit VC IC Vd R IS VOUT ROUT RL Supply voltage (±5 %)2) Current consumption R.m.s. voltage for AC isolation test, 50/60 Hz, 1 mn Isolation resistance @ 500 VDC Output voltage @ ± IPN, RL = 10 kΩ, TA = 25°C Output internal resistance Load resistance ±12 .. ±15 <±15 2.5 >500 ±4 100 ≥10 V mA kV MΩ V Ω kΩ Accuracy - Dynamic performance data ε X L VOE VOH VOT TC ε G tr f Accuracy @ IPN, TA = 25°C (without offset) Linearity (0 .. ± IPN) Electrical offset voltage, TA = 25°C Hysteresis offset voltage @ IP = 0; after an excursion of 3 x IPN Thermal drift of VOE HTB 50-(T)P HTB 100-(T)P..400-P Thermal drift (% of reading) Response time @ 90% of IP Frequency bandwidth (-3 dB)3) <±1 <±1 <±30 % of IPN % of IPN mV Advantages
● Small size and space sa...
HTB200-P page 2 preview