HY10-P Datasheet (Current Transducers HY 5 to 25-P)

Part: HY10-P
Manufacturer: LEM
Size: 109.79 KB

HY10-P Key Features

Hall effect measuring principle
Galvanic isolation between primary
Isolation voltage 2500 V~
pact design for PCB mounting
Low power consumption
Extended measuring range (3 x IPN)
Insulated plastic case recognized
Easy mounting
Small size and space saving
Only one design for wide current

Other HY10-P Datasheets

Manufacturer	Part Number	Description
HUAYI	HY1001B	N-Channel Enhancement Mode MOSFET
HOOYI	HY1001D	N-Channel Enhancement Mode MOSFET
HOOYI	HY1001M	N-Channel Enhancement Mode MOSFET
HOOYI	HY1001P	N-Channel Enhancement Mode MOSFET
HOOYI	HY1001U	N-Channel Enhancement Mode MOSFET

HY10-P Description

Current Transducers HY 5 to 25-P For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). 25 A Electrical data Primary nominal r.m.s.