Datasheet4U Logo Datasheet4U.com

LM3414S - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

LMN3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/5.8A, RDS(ON)=25mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design Product.

📥 Download Datasheet

Datasheet preview – LM3414S

Datasheet Details

Part number LM3414S
Manufacturer LFC semi
File Size 488.13 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LM3414S Datasheet
Additional preview pages of the LM3414S datasheet.

📁 Similar Datasheet

  • LM3414 - 60-W Common Anode-Capable Constant Current Buck LED Driver (Texas Instruments)
  • LM3414 - 1A 60W Common Anode Capable Constant Current Buck LED Driver (National Semiconductor Corporation)
  • LM3414HV - 60-W Common Anode-Capable Constant Current Buck LED Driver (Texas Instruments)
  • LM3414HV - 1A 60W Common Anode Capable Constant Current Buck LED Driver Requires (National Semiconductor Corporation)
  • LM341 - 3-Terminal Positive Voltage Regulators (National Semiconductor)
  • LM341 - 3-Terminal 500-mA Positive Voltage Regulators (Texas Instruments)
  • LM3410 - Constant-Current Boost and SEPIC LED Driver (Texas Instruments)
  • LM3410 - Constant Current Boost and SEPIC LED Driver (National Semiconductor)
  • LM3410-Q1 - Constant-Current Boost and SEPIC LED Driver (Texas Instruments)
  • LM3411 - Precision Secondary Regulator/Driver (National Semiconductor)
Other Datasheets by LFC semi

    Full PDF Text Transcription

    Click to expand full text
    LM3414S 20V N-Channel Enhancement Mode MOSFET LMN3414S Rev. 1.0 Features  20V/5.8A, RDS(ON)=25mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design Product Description LMN3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
    Published: |