Datasheet Summary
LM3414S 20V N-Channel Enhancement Mode MOSFET
LMN3414S
Rev. 1.0
Features
- 20V/5.8A, RDS(ON)=25mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
Product Description
LMN3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Portable Equipment
- Battery Powered...
