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LM3414S - 20V N-Channel Enhancement Mode MOSFET

General Description

LMN3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/5.8A, RDS(ON)=25mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design Product.

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Datasheet Details

Part number LM3414S
Manufacturer LFC semi
File Size 488.13 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LM3414S Datasheet

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LM3414S 20V N-Channel Enhancement Mode MOSFET LMN3414S Rev. 1.0 Features  20V/5.8A, RDS(ON)=25mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design Product Description LMN3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.