LMN1912
Features
- 20V, 1.8A, RDS(ON)=280mΩ@VGS=4.5V
- 20V, 1.5A, RDS(ON)=340mΩ@VGS=2.5V
- 20V, 1.2A, RDS(ON)=580mΩ@VGS=1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- SOT-363 package design
Product Description
LMN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Smart Phones, Pagers
Pin Configuration
LMN1912X6F (SOT-363)
Description
Source1
Gate1
Drain2
Source2
Gate2
Drain1
Notice: The information in this document is subject to change...
