LMN1912 - 20V N-Channel Enhancement Mode MOSFET

General Description

LMN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

20V, 1.8A, RDS(ON)=280mΩ@VGS=4.5V.
20V, 1.5A, RDS(ON)=340mΩ@VGS=2.5V.
20V, 1.2A, RDS(ON)=580mΩ@VGS=1.8V.
Low Offset (Error) Voltage.
Low-Voltage Operation.
High-Speed Circuits.
Low Battery Voltage Operation.
SOT-363 package design Product.

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LMN1912 20v n-channel enhancement mode mosfet by LFC semi - Datasheet Preview

Datasheet Details

Part number	LMN1912
Manufacturer	LFC semi
File Size	1.89 MB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	LMN1912 Datasheet

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Full PDF Text Transcription (Reference)

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LMN1912 Rev. 1.0 20V N-Channel Enhancement Mode MOSFETs Features ● 20V, 1.8A, RDS(ON)=280mΩ@VGS=4.5V ● 20V, 1.5A, RDS(ON)=340mΩ@VGS=2.5V ● 20V, 1.2A, RDS(ON)=580mΩ@VGS=1.8V ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Circuits ● Low Battery Voltage Operation ● SOT-363 package design Product Description LMN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.