LMN1912 Overview
LMN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. The information in this document is subject to change without...
LMN1912 Key Features
- 20V, 1.8A, RDS(ON)=280mΩ@VGS=4.5V
- 20V, 1.5A, RDS(ON)=340mΩ@VGS=2.5V
- 20V, 1.2A, RDS(ON)=580mΩ@VGS=1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- SOT-363 package design