LMN2730EX7F Overview
LMN2730, Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. The information in this document is subject to change without notice. Ordering Information LMN2730E LFC P/N Marking Information 0 Part Number LMN2730EX7F Rev.
LMN2730EX7F Key Features
- 20V, 700mA, RDS(ON)=400mΩ@VGS=4.5V
- Fast switching
- Suit for 1.5V Gate Drive
LMN2730EX7F Applications
- Green Device Available