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LMN2730EX7F - 20V Dual N-Channel MOSFET

General Description

LMN2730, Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Notebook Load Switch Networking

Key Features

  • 20V, 700mA, RDS(ON)=400mΩ@VGS=4.5V.
  • Fast switching.
  • Suit for 1.5V Gate Drive.

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Datasheet Details

Part number LMN2730EX7F
Manufacturer LFC semi
File Size 898.34 KB
Description 20V Dual N-Channel MOSFET
Datasheet download datasheet LMN2730EX7F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMN2730EX7F Rev. 1.0 20V Dual N-Channel MOSFETs Features ● 20V, 700mA, RDS(ON)=400mΩ@VGS=4.5V ● Fast switching ● Suit for 1.5V Gate Drive Applications ● Green Device Available ● SOT-563 package design withstand high energy pulse in the avalanche and commutation mode. LMN2730 is well suited for high efficiency fast switching applications. Product Description LMN2730, Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.