LMN3106ZF Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. The information in this document is subject to change without notice. Ordering Information Part Number LMN3106ZF P/N LMN3106 LMN3320XF Rev.
LMN3106ZF Key Features
- 30V,54A, RDS(ON)<6mΩ@VGS=10V
- High Power and current handing capability
- Lead Free and Green Devices Available
- DFN3x3-8L package design