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LMN3320XF
Rev. 1.0
LMN3106ZF 30V N-Channel MOSFETs
Features
30V,54A, RDS(ON)<6mΩ@VGS=10V High Power and current handing capability Lead Free and Green Devices Available DFN3x3-8L package design
resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.