LMN3106ZF
Features
- 30V,54A, RDS(ON)<6mΩ@VGS=10V
- High Power and current handing capability
- Lead Free and Green Devices Available
- DFN3x3-8L package design resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state
Applications
- MB / VGA / Vcore
- POL Applications
- SMPS 2nd SR
Pin Configuration
LMN3106ZF (DFN3x3-8L)
PIN 1, 2 & 3
4 5, 6, 7 & 8
Description
Source Gate Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMN3106ZF
P/N LMN3106
LMN3320XF
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package DFN3x3-8L
Quantity 5000...
