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LMN3106ZF - 30V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

MB / VGA / Vcore POL Applications SMPS 2nd SR Pin Configuration LMN3106ZF (DFN3x3-8L) PIN 1,

Key Features

  • 30V,54A, RDS(ON).

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Datasheet Details

Part number LMN3106ZF
Manufacturer LFC semi
File Size 642.24 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet LMN3106ZF Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMN3320XF Rev. 1.0 LMN3106ZF 30V N-Channel MOSFETs Features  30V,54A, RDS(ON)<6mΩ@VGS=10V  High Power and current handing capability  Lead Free and Green Devices Available  DFN3x3-8L package design resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.