LMN3760EX6F Key Features
- Low Gate Charge
- ESD Protected
- SOT-363 package design
- Part: LMN3760EX6F
- Manufacturer: LFC semi
- Size: 1.27 MB
Related LFC semi Datasheets
| Part Number | Description |
|---|---|
| LMN3760EX7F | 30V Dual N-Channel MOSFET |
| LMN3106ZF | 30V N-Channel MOSFET |
| LMN3112DF | 30V N-Channel MOSFET |
| LMN3112S | 30V N-Channel MOSFET |
| LMN3112XF | 30V N-Channel MOSFET |
LMN3760EX6F Description
LMN3760E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. The information in this document is subject to change without notice. Ordering Information LMN3760E LFC P/N Marking Information 0 Part Number LMN3760EX6F Rev.
LMN3760EX6F Applications
- Power Management in Note book