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LMN3760EX6F
Rev. 1.0
LMN3760EX6F 30V Dual N-Channel MOSFETs
Features
● Low Gate Charge ● ESD Protected ● SOT-363 package design
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Product Description LMN3760E, N-Channel enhancement mode MOSFET,
uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Applications
● Power Management in Note book ● Load Switch ● Portable Equipment
Pin Configuration
LMN3760EX6F (SOT-363)
PIN
Description
1
Source1
2
Gate1
3
Drain2
4
Source2
5
Gate2
6
Drain1
LMN3760EX6F
Notice: The information in this document is subject to change without notice.