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LMN3760EX6F - 30V Dual N-Channel MOSFET

Description

uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Power Management in Note book Load Switch Portable Equipment Pin Configuration LMN3760EX6F (SOT-363) PIN Description 1 Source1 2 Gate1 3

Features

  • Low Gate Charge.
  • ESD Protected.
  • SOT-363 package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount.

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Datasheet Details

Part number LMN3760EX6F
Manufacturer LFC semi
File Size 1.27 MB
Description 30V Dual N-Channel MOSFET
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Full PDF Text Transcription

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LMN3760EX6F Rev. 1.0 LMN3760EX6F 30V Dual N-Channel MOSFETs Features ● Low Gate Charge ● ESD Protected ● SOT-363 package design These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Product Description LMN3760E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. Applications ● Power Management in Note book ● Load Switch ● Portable Equipment Pin Configuration LMN3760EX6F (SOT-363) PIN Description 1 Source1 2 Gate1 3 Drain2 4 Source2 5 Gate2 6 Drain1 LMN3760EX6F Notice: The information in this document is subject to change without notice.
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