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LMN6184DF
Rev. 1.0
LMN6184DF 60V N-Channel Enhancement Mode MOSFET
Features
RDS(ON)=92mΩ@VGS=10V RDS(ON)=100mΩ@VGS=4.5V Improved dv/dt capability Fast switching 100% EAS guaranteed.
been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.