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LMNBSS123 - 100V N-Channel Enhancement Mode MOSFET

General Description

The LMNBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

DC to DC Converter Cellular & PCMCIA Card Cordless Telephone

etc.

Key Features

  • 100V, 0.17A, RDS(ON) =6.0Ω@VGS = 10V.
  • SOT-23 package design.
  • Lead(Pb)-Free Product.

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Datasheet Details

Part number LMNBSS123
Manufacturer LFC semi
File Size 338.18 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMNBSS123 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMNBSS123 Rev. 1.0 LMNBSS123 100V N-Channel Enhancement Mode MOSFET Features ● 100V, 0.17A, RDS(ON) =6.0Ω@VGS = 10V ● SOT-23 package design ● Lead(Pb)-Free Product Description The LMNBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. Applications ● DC to DC Converter ● Cellular & PCMCIA Card ● Cordless Telephone ● Power Management in Portable and Battery etc. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Pin Configuration LMNBSS123JZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain LMNBSS123 Notice: The information in this document is subject to change without notice. 1 Email:amy@lfc-semi.com www.lfc-semi.