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LMNBSS123 - 100V N-Channel Enhancement Mode MOSFET

Description

The LMNBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

DC to DC Converter Cellular & PCMCIA Card Cordless Telephone

etc.

Features

  • 100V, 0.17A, RDS(ON) =6.0Ω@VGS = 10V.
  • SOT-23 package design.
  • Lead(Pb)-Free Product.

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Datasheet preview – LMNBSS123

Datasheet Details

Part number LMNBSS123
Manufacturer LFC semi
File Size 338.18 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMNBSS123 Datasheet
Additional preview pages of the LMNBSS123 datasheet.

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Full PDF Text Transcription

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LMNBSS123 Rev. 1.0 LMNBSS123 100V N-Channel Enhancement Mode MOSFET Features ● 100V, 0.17A, RDS(ON) =6.0Ω@VGS = 10V ● SOT-23 package design ● Lead(Pb)-Free Product Description The LMNBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. Applications ● DC to DC Converter ● Cellular & PCMCIA Card ● Cordless Telephone ● Power Management in Portable and Battery etc. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Pin Configuration LMNBSS123JZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain LMNBSS123 Notice: The information in this document is subject to change without notice. 1 Email:amy@lfc-semi.com www.lfc-semi.
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